vesd05a8-hn2 document number 84712 rev. 1.0, 08-apr-05 vishay semiconductors www.vishay.com 1 19377 2 3 4 5 6 7 8 9 193 8 3 2 3 4 7 6 5 pin 9 = co mm o n an ode 1 8 top vie w 8-line esd protection diode array in llp70 features ? ultra compact llp70 package 8-line esd-protection low leakage current esd protection to iec 61000-4-2 30 kv (air) esd protection to iec 61000-4-2 30 kv (contact) lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: llp70-9a (plastic package). non magnetic molding compound flammability rating: ul 94 v -0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 8.2 mg packaging codes/options: gs18 = 10 k per 13" reel (8 mm tape), 10 k/box gs08 = 3 k per 7" reel (8 mm tape), 15 k/box marking: square = pin 1 marking ?aj? = type code for v esd05a8-hn2 = date code (example only) absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise specified thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified parameter symbol v alue unit esd air discharge per iec 61000-4-2 v esd 30 k v esd contact discharge per iec 61000-4-2 v esd 30 k v peak pulse power 8/20 s waveform p ppm 60 w peak pulse current 8/20 s waveform i ppm 5a parameter symbol v alue unit operating temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c e3 t1 aj t1
www.vishay.com 2 document number 84712 rev. 1.0, 08-apr-05 vesd05a8-hn2 vishay semiconductors electrical characteristics (t a = 25 c unless otherwise specified) valid for each single diode between pin 1-8 and pin 9 typical characteristics (t amb = 25 c unless otherwise specified) parameter test conditions synbol min. ty p. max. unit reverse stand-off v oltage at max. reverse current v rwm 5 v max. reverse current at v r = 5 v i r 1a max. clamping voltage at i pp = 5 a acc. iec 61000-4-5 v c 12 v max. forward clamping voltage at i pp = 5 a acc. iec 61000-4-5 v f 3.2 4.5 v max. peak pulse current acc. iec 61000-4-5 see fig. 1 i ppm - 25 5 a min. reverse breakdown v oltage at i r = 1 ma v br 6.0 6.6 7.5 v capacitance at v r = 0 v ; f = 1 mhz c d 40 50 pf forward voltage at i f = 1 a ; t p < 300 s v f 1.5 1.8 v esd-clamping voltage (overshoot) at + 8 k v esd-pulse acc. iec 61000-4-2 v c-esd 68 v esd-clamping voltage (undershoot) at - 8 k v esd-pulse acc. iec 61000-4-2 v c-esd - 63 v figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 8 0 % 100 % 0 10203040 time in s i ppm 20 s to 50 % 8 s to 100 % 19333 figure 2. typical capacitance c d vs. reverse v oltage v r 0 10 20 30 40 50 012345 v r in v c d in pf f = 1mhz 1935 8
vesd05a8-hn2 document number 84712 rev. 1.0, 08-apr-05 vishay semiconductors www.vishay.com 3 figure 3. typical forward current i f vs. forward v oltage v f figure 4. typical reverse v oltage v r vs. reverse current i r figure 5. typical clamping v oltage vs. peak pulse current i pp 0,001 0,01 0,1 1 10 100 0,5 0,6 0,7 0, 8 0,9 1 v f in v i f in ma 19359 0 1 2 3 4 5 6 7 8 0,01 0,1 1 10 100 1000 i r in a v r in v 19360 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 i pp in a v c in v meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v eform) for w ard re v erse 19361 figure 6. typical clamping performance on - 8 k v - esd events (acc. iec 61000-4-2) figure 7. typical clampi ng performance on + 8 k v - esd events (acc. iec 61000-4-2) figure 8. typical max. clamping voltage at esd contact discharge (acc. iec 61000-4-2) -70 -60 -50 -40 -30 -20 -10 0 10 20 30 -10 0 10 20 30 40 50 60 70 8 090 t in ns v c-esd in v v esd = - 8 kv acc. iec 61000-4-2 19362 -20 -10 0 10 20 30 40 50 60 70 8 0 -10 0 10 20 30 40 50 60 70 8 090 t in ns v c-esd in v v esd = + 8 kv acc. iec 61000-4-2 19363 -300 -250 -200 -150 -100 -50 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v esd in kv v c-esd in v acc. iec 61000-4-2 contact dischar g e re v erse: o v ershoot @ pos. esd for w ard: undershoot @ neg. esd 19364
www.vishay.com 4 document number 84712 rev. 1.0, 08-apr-05 vesd05a8-hn2 vishay semiconductors application note: a) with the vesd05a8-hn2 8 different signal or data lines can be clamped to ground. due to the different clamping levels in forward and reverse direction the vesd05a8-hn2 clamping behavior is bi directional and as ymmetric (bias) . b) if symmetrical clamping behaviour is required the vesd05a8-hn2 can also be used as a bi directional sy mmetric protection (bisy) device protecting up to 7 lines. in this case pin no.9 must not be connected. l1 l2 l3 l4 l5 l6 l7 l 8 193 8 4 l1 l2 l3 l4 l5 l6 l7 193 8 5
vesd05a8-hn2 document number 84712 rev. 1.0, 08-apr-05 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches) 19375
www.vishay.com 6 document number 84712 rev. 1.0, 08-apr-05 vesd05a8-hn2 vishay semiconductors ozone depleting substances policy statement it is the policy of v ishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. v arious national and international initiatives are pressing for an earlier ban on these substances. v ishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. v ishay semiconductor gmbh can certify that our semic onductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use v ishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify v ishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. v ishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
